碳化硅（SiC）是性能優(yōu)異的第三代寬禁帶半導(dǎo)體材料，具有禁帶寬度大、高熱導(dǎo)率、高擊穿電場、本征溫度高、抗輻射、化學(xué)穩(wěn)定性好、電子飽和漂移速度高等優(yōu)點。 Silicon carbide (SiC) is a third-generation wide band gap semiconductor material with excellent performance, which has the advantages of wide band gap, high thermal conductivity, high breakdown electric field, high intrinsic temperature, radiation resistance, good chemical stability and high electron saturation drift speed.